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| savantic semiconductor product specification silicon npn power transistors bu426 BU426A d escription with to-3pn package high voltage ,high speed applications intended for use in switching-mode color tv supply systems pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit bu426 800 v cbo collector-base voltage BU426A open emitter 900 v bu426 375 v ceo collector-emitter voltage BU426A open base 400 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 6 a i cm collector current (pulse) 8 a i b base current 3 a p c collector power dissipation t c =25 113 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors bu426 BU426A c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bu426 375 v ceo(sus) collector-emitter sustaining voltage BU426A i c =100ma; i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =2.5a; i b =0.5a 1.5 v v cesat-2 collector-emitter saturation voltage i c =4a; i b =1.25a 3.0 v v besat-1 base-emitter saturation voltage i c =2.5a; i b =0.5a 1.4 v v besat-2 base-emitter saturation voltage i c =4a; i b =1.25a 1.6 v bu426 v ce =800v ;v be =0 t c =125 1.0 2.0 i ces collector cut-off current BU426A v ce =900v ;v be =0 t c =125 1.0 2.0 ma i ebo emitter cut-off current v eb =10v; i c =0 10 ma h fe dc current gain i c =0.6a ; v ce =5v 30 60 switching times t on turn-on time i c =2.5a ; v cc =250v i b1 =0.5a 0.5 s t stg storage time 3.5 s t f fall time i c =2.5a ; v cc =250v i b1 =0.5a; i b2 =-1a 0.5 s thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.1 /w savantic semiconductor product specification 3 silicon npn power transistors bu426 BU426A package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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